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18/01/2018

Graphene nanocrystal transistor made progress

According to the Swiss Federal Institute of Materials (EMPA), significant progress has been made in the development of nanocrystal transistors in cooperation with the Max Planck Institute for Polymer Research and the University of California, Berkeley. The core structure made of graphene nanoribbons Improve the performance and yield of the nano-transistor, and create conditions for the practical application of the nano-semiconductor device. 7mbr150vr120-50

Graphene nanoribbons made of graphene can exhibit excellent semiconducting properties, but their semiconducting properties are closely related to the arrangement of carbon atoms at the edges of the graphene nanoribbons. For example, the edge carbon atoms are arranged in a zigzag pattern, showing the metal Conductor properties, such as a regular "armchair" arrangement, show semiconducting properties and therefore require very strict manufacturing techniques.

According to reports, the research team has developed a new method, by pre-prepared carbon molecular materials in high vacuum gasification, such as puzzle generally gradually deposited on the substrate of gold material to form a width of 1 nm, a length of 50 Nanometer graphene nanoribbons. This graphene nanostructure can only be observed by a tunnel scanning microscope. It has a precisely ordered atomic arrangement with a width of 9 carbon atoms and the edges of the carbon atoms are arranged in a neat "armchair" so as to have a sufficiently large The very precise energy band gap exhibits excellent semiconducting performance with a sufficiently large difference in current flow between on and off states. ixxn110n65c4h1

Researchers will get the graphene nanoribbon structure implanted in the transistor, and the use of hafnium oxide material instead of silicon oxide material as a dielectric layer, so that the internal thickness of the dielectric layer of the nano-transistor is reduced from 50 nm to 1.5 nm, the nano-transistor in the conduction The conductivity of the state is an order of magnitude increase. At the same time, as the core of nanocrystal, the structure of graphene nanoribbons is also innovative in the arrangement of transistors. It is no longer arranged along the vertical and horizontal directions of the transistor substrate, but precisely along the channel of the transistor, greatly increasing the finished product of the nanocrystal rate.